sbt80-04j no.7788-1/3 applications high frequency rectification (switching regulators, converters, choppers). features guaranteed up to tj=150 c. low forward voltage (v f max=0.55v). short reverse recovery time. low switching noise. high reliability due to highly reliable planar structure. attachment workability is good by mica-less package. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 40 v nonrepetitive peak reverse surge voltage v rsm 44 v average output current i o 50hz resistive load, sine wave tc=117 c8 a surge forward current i fsm 50hz sine wave, 1 cycle 80 a junction temperature tj --55 to +150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit reverse voltage v r i r =1ma, tj=25 c* 40 v forward voltage v f i f =3.0a, tj=25 c* 0.55 v reverse current i r v r =20v, tj=25 c* 0.1 ma note) * : value per element continued on next page. sanyo semiconductors data sheet ordering number : en7788a n0707 ti im tc-00000993 / 31505sd ts im tb-00001275 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan sbt80-04j schottky barrier diode (twin type ?cathode common) 40v, 8a rectifier http://semicon.sanyo.com/en/network
sbt80-04j no.7788-2/3 continued from preceding page. ratings parameter symbol conditions min typ max unit interterminal capacitance c v r =10v, tj=25 c* 160 pf thermal resistance rth(j-c) junction-case : smoothed dc 5.0 c / w note) * : value per element package dimensions electrical connection unit : mm (typ) 7508-001 anode anode cathode 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.2 2.4 1.6 1.2 0.7 0.75 2.55 2.55 123 1 : anode 2 : cathode 3 : anode sanyo : to-220ml 0 1.0 10 0.4 1.6 1.2 0.8 5 7 2 3 5 7 2 3 5 7 2 3 3 2 0.01 0.1 tj=150 c 25 c it08506 0 10 1.0 5 7 5 7 3 2 5 7 3 2 100 10 20 30 40 50 (3) (1) 0 0 4 5 7 6 3 1 2 110 9 58 7 6 34 2 it08508 (4) (3) (1) 0 0 1.5 2.0 3.0 2.5 1.0 0.5 40 50 30 20 10 (2) (4) (2) it08507 it08509 tj=150 c max 150 c typ 125 c typ 100 c typ i f -- v f i r -- v r p f (av) -- i o p r (av) -- v rm p r max at tj=150 c forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- m a peak reverse voltage, v rm -- v average reverse power dissipation, p r (av) -- w average output current, i o -- a average forward power dissipation, p f (av) -- w 180 360
sbt80-04j no.7788-3/3 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. 0.01 23 7 7 0.1 0 52 23 37 1.0 5 120 60 80 100 20 40 id01009 rth(j-c) -- t transient thermal resistance, rth(j-c) -- c / w time, t -- s i fsm -- t surge forward current, i fsm (peak) -- a time, t -- s i s 20ms t 0.001 0.01 0.1 1.0 10 2 3 525252357 37 37 37 7 5 3 2 5 7 1.0 10 id01010 current waveform 50hz sine wave c -- v r interterminal capacitance, c -- pf reverse voltage, v r -- v 1.0 2 1000 100 2 3 5 7 5 7 357 10 23 57 7 f=100khz id01008 tc -- i o case temperature, tc -- c average output current, i o -- a (4) (3) 0123 100 110 120 160 150 140 130 90 80 70 45 7 9 810 6 (2) (1) it08510 (1)rectangular wav e
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